sti divot
本研究探討場發射金屬氧化半導電晶體(MOSFET)淺溝槽隔離絕緣層(ShallowTrenchIsolation,STI)與鄰近電晶體主動區的高度差(Step-height)對元件特性的影響。,由ZSui著作·2022—Thereare3~5%performanceimprovementbySTIdivotincreasedaround30AofCoredevicenomin...
Method of reducing STI divot formation during ...
- sti usg
- deep trench isolation process
- sti淺溝槽
- locos製程
- sti divot
- 屏蔽氧化層
- usg半導體
- 淺溝槽隔離
- sti divot
- sti divot
- deep trench isolation
- shallow trench isolation解釋
- sab半導體
- sti divot
- 屏蔽氧化層
- 淺溝槽隔離
- reverse narrow width effect
- sti divot
- shallow trench isolation解釋
- sti etch back
- sti淺溝槽
- ild半導體
- cmos sti
- sti divot
- sti locos
STIdivotformationiseliminatedorsubstantiallyreducedbyemployingaverythinnitridepolishstoplayer,e.g.,nothickerthan400Å.Theverythin ...
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