sti divot
本研究探討場發射金屬氧化半導電晶體(MOSFET)淺溝槽隔離絕緣層(ShallowTrenchIsolation,STI)與鄰近電晶體主動區的高度差(Step-height)對元件特性的影響。,STIdivotformationiseliminatedorsubstantiallyreducedbyemployingaverythinnitridepolishstoplayer,e...
Method of reducing STI divot formation during ...
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STIdivotformationiseliminatedorsubstantiallyreducedbyemployingaverythinnitridepolishstoplayer,e.g.,nothickerthan400Å.Theverythin ...
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